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The DMP4006SPSWQ is a 40V P-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage of -40V and continuous drain currents of -115A at TC = +25°C and -92A at TC = +70°C. The static on-resistance is 5.2mΩ max at VGS = -10V and 7.9mΩ max at VGS = -6V. Total power dissipation reaches 3.4W at TA = +25°C and 104W at TC = +25°C. Operating junction temperature ranges from -55°C to +150°C.
Verify the complete part number includes the suffix '-13' for tape and reel packaging quantities. Confirm that the application environment meets the specified thermal conditions, as current ratings vary significantly between ambient and case temperatures. Ensure design compliance with RoHS directives and halogen-free standards required for the target market.
Select this component when high current handling and low on-resistance are critical for efficiency. The device supports both steady-state and pulsed operations up to -460A. Consider the thermal resistance values when designing heat dissipation strategies. Verify gate drive voltages align with the specified thresholds for optimal switching performance.
This part belongs to the DMP4006 series of P-channel MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI5060-8/SWP surface-mount package. The product line targets robust industrial and automotive environments requiring high reliability and stringent quality certifications.
Consult official substitution lists for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions. Verify compatibility with existing PCB layouts and thermal management designs before implementation.
Yes, it is qualified to AEC-Q101, supported by PPAP, and manufactured in IATF 16949 certified facilities.
The maximum pulsed drain current is -460A with a 10µs pulse duration and 1% duty cycle.
Yes, 100% Unclamped Inductive Switch (UIS) testing is performed during production.