DMP4006SPSWQ-13

DMP4006SPSWQ-13

$1.67
  • Description:MOSFET BVDSS: 41V~60V POWERDI506
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:e5da1ef1762b Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 41V~60V POWERDI506
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:115A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:5.2mOhm @ 9.8A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:162 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6855 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):3.4W (Ta), 104W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount, Wettable Flank
  • Supplier Device Package:PowerDI5060-8 (Type UX)
  • Package / Case:8-PowerTDFN

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DMP4006SPSWQ-13

Overview

The DMP4006SPSWQ is a 40V P-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage of -40V and continuous drain currents of -115A at TC = +25°C and -92A at TC = +70°C. The static on-resistance is 5.2mΩ max at VGS = -10V and 7.9mΩ max at VGS = -6V. Total power dissipation reaches 3.4W at TA = +25°C and 104W at TC = +25°C. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

  • Qualified for automotive applications with AEC-Q101 certification and PPAP capability.
  • Manufactured in IATF 16949 certified facilities for specific change control requirements.
  • Features wettable flanks to improve optical inspection reliability.
  • Subjected to 100% Unclamped Inductive Switch (UIS) testing during production.

Applications

  • Reverse-polarity protections
  • BLDC motor controls
  • Power-management functions
  • Systems/load switches

Procurement Notes

Verify the complete part number includes the suffix '-13' for tape and reel packaging quantities. Confirm that the application environment meets the specified thermal conditions, as current ratings vary significantly between ambient and case temperatures. Ensure design compliance with RoHS directives and halogen-free standards required for the target market.

Selection Notes

Select this component when high current handling and low on-resistance are critical for efficiency. The device supports both steady-state and pulsed operations up to -460A. Consider the thermal resistance values when designing heat dissipation strategies. Verify gate drive voltages align with the specified thresholds for optimal switching performance.

Part Context

This part belongs to the DMP4006 series of P-channel MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI5060-8/SWP surface-mount package. The product line targets robust industrial and automotive environments requiring high reliability and stringent quality certifications.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions. Verify compatibility with existing PCB layouts and thermal management designs before implementation.

FAQ

Is the DMP4006SPSWQ suitable for automotive use?

Yes, it is qualified to AEC-Q101, supported by PPAP, and manufactured in IATF 16949 certified facilities.

What is the maximum pulsed drain current?

The maximum pulsed drain current is -460A with a 10µs pulse duration and 1% duty cycle.

Does the device support UIS testing?

Yes, 100% Unclamped Inductive Switch (UIS) testing is performed during production.

DMP4006SPSWQ-13DMP4006SPSWQ-13
$1.67
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