DMP4009SPSWQ-13

$0.39

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:42cdb6462a32 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5697 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.9W (Ta), 119W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMP4009SPSWQ-13

Overview

The DMP4009SPSWQ is a 40V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -40V and a continuous drain current (ID) of -79A at TC = +25°C. The device offers a typical static drain-source on-resistance (RDS(ON)) of 6.7mΩ at VGS = -10V and 9.3mΩ at VGS = -4.5V. Packaged in a PowerDI5060-8/SWP (Type UX) format, it supports a junction temperature range from -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications
Wettable flank design facilitates improved optical inspections
Manufactured in IATF 16949 certified facilities
RoHS compliant with halogen and antimony-free green device finish

Applications

DC-DC converters
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the component meets the required AEC-Q101 qualification level and PPAP documentation standards for your specific automotive application context before finalizing procurement.

Selection Notes

Select this component when a low-profile surface-mount solution is required for 40V P-channel switching. Ensure the gate drive voltage aligns with the specified RDS(ON) conditions at -10V or -4.5V. Verify thermal management capabilities against the junction-to-case resistance values provided in the datasheet for steady-state operations.

Part Context

This part belongs to the DMP series of P-channel MOSFETs designed for high-efficiency power switching. It utilizes the PowerDI5060-8 package to provide a compact footprint suitable for dense PCB layouts. The device integrates an internal body diode and is optimized for fast switching speeds and low conduction losses.

Replacement Considerations

Consult official Diodes Incorporated substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters such as BVDSS, ID, and RDS(ON).