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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V SO-8 T&R 2
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5697 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMP4009SSS-13 is a P-channel enhancement mode MOSFET in an SO-8 package. It features a drain-source voltage of -40V and a continuous drain current of -10A at +25°C. The maximum on-resistance is 11mΩ at VGS = -10V and 19mΩ at VGS = -4.5V. Total gate charge is 112nC at VGS = -10V. Input capacitance is 5697pF. Thermal resistance junction-to-ambient is 79°C/W on FR-4. Operating temperature range is -55°C to +150°C.
Feature Summary
- Designed for high-efficiency power-management applications with minimized on-state resistance.
- Maintains superior switching performance alongside low input capacitance.
- Verified for unclamped inductive switching (UIS) capability during production testing.
Applications
- DC-DC converters
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packing quantity of 2,500 units as documented. Confirm that the component meets RoHS 2 and RoHS 3 compliance standards if required by your manufacturing process. Ensure the SO-8 package dimensions align with your PCB footprint design guidelines before finalizing procurement orders.
Selection Notes
Select this component when a -40V P-channel MOSFET is required for compact designs due to the SO-8 package. Consider the 11mΩ RDS(ON) specification for efficiency needs at -10V gate drive. Evaluate the thermal resistance values against your expected power dissipation levels. Verify compatibility with your control logic voltage levels given the threshold voltage specifications.
Part Context
This device belongs to Diodes Incorporated's new generation of MOSFETs engineered to balance low on-state resistance with fast switching speeds. The product line targets modern power management systems where space constraints and efficiency are critical. The SO-8 package provides a standardized form factor for surface-mount assembly processes.
Replacement Considerations
No public substitute part numbers are explicitly confirmed in the provided documentation. Engineers should verify pinout compatibility and electrical parameter overlaps with alternative suppliers before substitution.
FAQ
What is the maximum pulsed drain current for the DMP4009SSS?
The maximum pulsed drain current is -104A, specified with a 10μs pulse duration and a 1% duty cycle.
Is the DMP4009SSS suitable for automotive applications?
For automotive applications requiring AEC-Q100/101/104/200 qualification or PPAP capability, customers must contact Diodes Incorporated directly, as standard parts may not meet these specific controls.
