DMP4013LFGQ-13

$1.05

Description：MOSFET P-CH 40V 10.3A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e64c365c72a2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V 10.3A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：10.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：68.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3426 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP4013LFGQ-13

Overview

The DMP4013LFGQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (V_DSS) of -40 V and a continuous drain current (I_D) of -10.3 A at +25°C ambient temperature. The device exhibits a maximum on-resistance (R_DS(ON)) of 13 mΩ at V_GS = -10 V and 18 mΩ at V_GS = -4.5 V. Total gate charge (Q_g) is specified as 68.6 nC at V_GS = -10 V. Thermal resistance from junction to ambient is 123 °C/W under steady-state conditions with minimum pad layout.

Feature Summary

Qualified for automotive applications meeting AEC-Q101 standards and supported by PPAP documentation.
PowerDI3333-8 package design occupies significantly less board area compared to SO-8 packages.
Manufactured using lead-free materials that are fully RoHS compliant and free of halogens and antimony.

Applications

Reverse-polarity protections
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel carrier configuration. Confirm compliance with IATF 16949 manufacturing requirements if automotive change control protocols are mandated for the project. Ensure the selected component matches the PowerDI3333-8 mechanical dimensions and pad layout specifications provided in the datasheet.

Selection Notes

Select this component when space-constrained designs require high-density mounting solutions suitable for automotive environments. Evaluate thermal performance based on the required PCB copper area, as power dissipation capabilities vary significantly between minimum pad layouts and optimized thermal biasing configurations. Consider the gate threshold voltage characteristics for compatibility with available drive voltages.

Part Context

This part belongs to the DMP4013LFGQ series of P-channel MOSFETs designed specifically for automotive use. It shares the same electrical profile and package type as the DMP4013LFGQ-7 variant, differing primarily in the packaging quantity and carrier type. Both variants utilize the same silicon die and meet identical qualification standards.