DMP4013LFGQ-7

$1.05

Description：MOSFET P-CH 40V 10.3A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f25e960883d9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V 10.3A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：10.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：68.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3426 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP4013LFGQ-7

Overview

The DMP4013LFGQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source breakdown voltage and a maximum continuous drain current of -10.3A at +25°C. The device offers a low on-resistance of 13mΩ at VGS = -10V and 18mΩ at VGS = -4.5V. Packaged in a PowerDI3333-8 surface-mount format, it supports an operating junction temperature range from -55°C to +150°C with a total power dissipation of 1W.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards
PowerDI3333-8 package reduces board area by 33% compared to SO-8
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Reverse-polarity protections
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity. The -7 suffix indicates a 2000-unit tape and reel carrier. Confirm that the component meets all necessary automotive quality requirements, including PPAP capability and IATF 16949 manufacturing certification, before finalizing procurement specifications.

Selection Notes

Select this component when space-constrained designs require high-density mounting solutions. The small form factor enables smaller end products while maintaining thermal efficiency. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance in the target application circuit.

Part Context

This part belongs to the DMP4013 series of single N-channel MOSFETs designed for automotive environments. It utilizes silicon technology within a molded plastic PowerDI package. The product line emphasizes compliance with strict automotive industry standards for reliability and environmental safety.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without redesigning the host circuit layout.