DMP4015SK3-13

$0.75

Description：MOSFET P-CH 40V 14A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9eadf761e9ea Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V 14A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47.5 nC @ 5 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：4234 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMP4015SK3-13

Overview

The DMP4015SK3-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO252 (DPAK) package with a drain-source voltage rating of -40V and a continuous drain current of -35A at TC=+25°C. The device exhibits a maximum on-resistance of 11mΩ at VGS=-10V and 15mΩ at VGS=-4.5V. Total gate charge is typically 47.5nC, with turn-on rise time of 10ns and turn-off fall time of 137.9ns. Thermal resistance junction-to-case is 4.5°C/W, and total power dissipation is 3.5W at TA=+25°C.

Feature Summary

100% Unclamped Inductive Switch (UIS) tested in production
Low on-state resistance for high efficiency
Fast switching speed capabilities
Qualified to JEDEC standards for high reliability

Applications

DC-DC converters
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance requirements and is halogen and antimony free. Ensure the procurement channel provides valid traceability for this automotive-grade qualified part number.

Selection Notes

Select this component when a P-channel MOSFET with a -40V breakdown voltage and low RDS(ON) is required for surface-mount applications. Consider the TO252 package constraints and thermal dissipation limits of 3.5W at ambient temperature. Evaluate the gate threshold voltage range of -1.5V to -2.5V against the driving circuit capabilities to ensure reliable switching performance.

Part Context

This part belongs to the DMP4015SK3 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management applications requiring robust reliability and fast transient response characteristics.

Replacement Considerations

An automotive-compliant version is available under the separate datasheet designation DMP4015SK3Q.

FAQ

Is the DMP4015SK3-13 qualified for automotive applications?

The standard DMP4015SK3-13 is qualified to JEDEC standards for high reliability. An automotive-compliant part is available under the separate datasheet designation DMP4015SK3Q.