DMP4026SFGQ-7

$0.25

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:853a62061225 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2275 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta), 33W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP4026SFGQ-7

Overview

The DMP4026SFGQ-7 is a 40V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 surface-mount packaging and meets AEC-Q101 automotive qualification standards. Key electrical parameters include a drain-source breakdown voltage of -40V, a maximum continuous drain current of -28A at TC = +25°C, and a static drain-source on-resistance (RDS(ON)) of 25mΩ at VGS = -10V. The device supports a total power dissipation of 2.6W at TA = +25°C and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Low RDS(ON) minimizes conduction losses
Fast switching speed minimizes switching losses
100% Unclamped Inductive Switch (UIS) tested in production
Totally lead-free and fully RoHS compliant

Applications

Motor controls
Backlighting
DC-DC converters
Printer equipment

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the component meets all applicable automotive quality requirements, including PPAP capability and IATF 16949 manufacturing facility certification. Ensure compliance with environmental directives such as RoHS 2, RoHS 3, and REACH before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring robust automotive-grade reliability and low conduction losses. Evaluate thermal management requirements based on the specified thermal resistance values and operating temperature limits. Verify that the gate drive voltage aligns with the optimal RDS(ON) performance conditions provided in the datasheet.

Part Context

This part belongs to the DMP4026 series of P-channel MOSFETs designed specifically for demanding automotive environments. It is engineered to meet stringent industry standards, ensuring high performance and durability under varying operational conditions typical of modern vehicle electronics.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-reference critical parameters such as package dimensions, pinout configuration, and electrical ratings to ensure functional compatibility without compromising system integrity.