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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：8.9A (Ta), 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2064 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMP4026SFVWQ-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications. It features a -40V drain-source voltage and a maximum continuous drain current of -49A at +25°C case temperature. The device offers a low on-resistance of 25mΩ at VGS = -10V and 45mΩ at VGS = -4.5V. Packaged in a thermally efficient PowerDI3333-8 (SWP) format, it supports high-density designs while occupying only 33% of the board area compared to SO-8 packages.
Feature Summary
- Low RDS(ON) ensures minimal on-state losses during operation
- Small form factor package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8 packages
- 100% unclamped inductive switch (UIS) tested in production
Applications
- Reverse-polarity protections
- Power-management functions
- DC-DC converters
Procurement Notes
Verify that the specific ordering suffix matches your required packing quantity. The -7 suffix indicates a tape and reel carrier with a quantity of 2000 units, while the -13 suffix corresponds to a 3000-unit reel. Confirm compliance with AEC-Q101 qualification and PPAP requirements if your application demands specific automotive change control standards. Ensure the selected variant aligns with your manufacturing assembly specifications.
Selection Notes
Select this component when designing circuits requiring robust reverse-polarity protection or efficient power management within tight space constraints. The PowerDI3333-8 package provides superior thermal performance compared to traditional surface-mount options. Consider the gate threshold voltage characteristics for logic-level compatibility. Evaluate the transient thermal resistance curves to ensure adequate heat dissipation under pulsed load conditions in your specific PCB layout environment.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, specifically engineered for high-reliability environments. It utilizes silicon technology and is manufactured in IATF 16949 certified facilities. The device is fully RoHS compliant and halogen-free, meeting stringent environmental standards for modern electronic assemblies.
Replacement Considerations
Direct substitutes include DMP4026SFGQ-7 and DMP4026SFG-13, which share identical electrical characteristics but differ in packaging quantities. Verify pinout compatibility and thermal resistance values before implementation.
