DMP4047LFDE-7

$0.56

Description：MOSFET P-CH 40V 3.3A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d4aca9b01ae2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V 3.3A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：33mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1382 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

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DMP4047LFDE-7

Overview

The DMP4047LFDE-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 package. It features a drain-source voltage (V_DSS) of -40 V and a maximum continuous drain current (I_D) of -6 A at +25°C. The device exhibits a low on-state resistance (R_DS(ON)) of 33 mΩ at V_GS = -10 V and 50 mΩ at V_GS = -4.5 V. Designed for high-efficiency power management, it offers superior switching performance with a total gate charge (Qg) of 23.2 nC at V_GS = -10 V.

Feature Summary

Low profile construction with a 0.6 mm height and compact PCB footprint suitable for space-constrained designs.
Optimized for high-efficiency power management by minimizing on-state resistance while maintaining fast switching characteristics.
Qualified to JEDEC standards for high reliability and fully compliant with RoHS directives.

Applications

General-purpose interfacing switches
Load switching circuits
Battery-management applications
Power-management functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the U-DFN2020-6 package type matches the required mechanical constraints for the target application. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling procedures.

Selection Notes

Select this component when a low-profile P-channel MOSFET is required for efficient power switching within a 40 V system. Consider the thermal resistance values provided for both single-sided FR-4 boards and multi-layer substrates with thermal vias to ensure adequate heat dissipation. Evaluate the gate threshold voltage range to confirm compatibility with the intended logic-level drive signals.

Part Context

This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes a U-DFN2020-6 surface-mount package designed for automated assembly. The product line emphasizes low on-resistance and high reliability for modern electronic systems requiring compact form factors.

Replacement Considerations

The automotive-compliant variant DMP4047LFDEQ is available under a separate datasheet. Verify if automotive qualification is required for the specific application environment before selecting an alternative.