DMP4065SQ-7

$0.56

Description：MOSFET P-CH 40V 2.4A SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f61504cf3a9d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V 2.4A SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：80mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：587 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：720mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP4065SQ-7

Overview

The DMP4065SQ is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -40V drain-source voltage and an on-resistance of 80mΩ at VGS=-10V, supporting up to -3.4A continuous drain current. The device operates within a junction temperature range of -55°C to +150°C and utilizes a SOT-23 package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Low on-resistance and low input capacitance for efficient switching
Totally lead-free and fully RoHS compliant construction

Applications

Battery charging systems
Power management functions
DC-DC converters
Portable power adaptors

Procurement Notes

Verify the specific ordering suffix (e.g., -7 or -13) against the required tape and reel quantity. Confirm that the component meets the necessary automotive quality standards and packaging specifications for your production line before finalizing the purchase order.

Selection Notes

Select this component for designs requiring robust automotive-grade reliability in a compact surface-mount footprint. Ensure the gate drive voltage aligns with the specified thresholds to achieve optimal on-resistance performance under expected load conditions.

Part Context

Manufactured by Diodes Incorporated, this part belongs to a series of automotive-qualified P-channel MOSFETs. It is produced in IATF 16949 certified facilities, ensuring consistent quality control and traceability required for critical automotive electronic systems.

Replacement Considerations

Check pinout compatibility and thermal resistance values when substituting. Verify that alternative components meet the same AEC-Q101 qualification requirements and maintain equivalent electrical characteristics for the intended application.