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Product Detailed Parameters
- Description：MOSFET P-CH 50V 180MA SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：180mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：24.6 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：310mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP510DL-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT23 package. It features a drain-source voltage (BVDSS) of -50V and a maximum static drain-source on-resistance (RDS(ON)) of 10Ω at VGS = -5V. The device supports a continuous drain current (ID) of -180mA at +25°C, with a pulsed drain current (IDM) rating of -1.2A. Electrical characteristics include a gate threshold voltage (VGS(TH)) ranging from -0.8V to -2.0V at ID = -1mA, and typical input capacitance (Ciss) of 24.6pF.
Feature Summary
- Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
- Compliant with RoHS standards, fully lead-free, halogen-free, and antimony-free.
- Qualified to JEDEC standards for high reliability.
- Features low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.
Applications
- General purpose interfacing switch
- Power management functions
- Analog switch
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 10,000 units per reel. Confirm that the standard SOT23 case material meets UL flammability classification rating 94V-0 requirements for your design. Ensure compatibility with moisture sensitivity level 1 per J-STD-020 during assembly processes.
Selection Notes
Select this component when a P-channel MOSFET with a -50V breakdown voltage and low on-resistance is required for general-purpose interfacing or analog switching. Consider the -180mA continuous current limit and 310mW power dissipation capabilities. Verify that the SOT23 package dimensions and thermal resistance values align with the PCB layout and thermal management strategy.
Part Context
This part belongs to the DMP series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. These devices are engineered to balance low on-state resistance with fast switching speeds, targeting efficiency in power management circuits. The product line includes various voltage ratings and package options to suit different application constraints.
Replacement Considerations
For automotive applications requiring specific change control, parts qualified to AEC-Q100/101/200, PPAP capability, and manufacturing in IATF 16949 certified facilities, refer to the related automotive grade Q-suffix part.
FAQ
What is the maximum continuous drain current for the DMP510DL-13?
The maximum continuous drain current is -180mA at an ambient temperature of +25°C.
Is the DMP510DL-13 suitable for automotive applications?
Standard versions are not explicitly designated for automotive use. For automotive applications requiring AEC-Q qualification and IATF 16949 manufacturing, the related automotive grade Q-suffix part should be used.
