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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V-60V SOT323 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：174mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：0.56 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：24.6 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：320mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMP510DLW-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -50V and a gate-source voltage (VGSS) rating of ±20V. The device exhibits a maximum static drain-source on-resistance (RDS(ON)) of 10Ω at VGS = -5V and ID = -0.1A. Continuous drain current (ID) is rated at -174mA at +25°C ambient temperature, with a pulsed drain current (IDM) capability of -1.0A. Operating and storage temperatures range from -55°C to +150°C.
Feature Summary
- Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
- Features low input capacitance and fast switching speed characteristics.
- Compliant with RoHS directives and fully lead-free, halogen-free, and antimony-free.
Applications
- Motor Control
- Power Management Functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets all applicable environmental compliance standards required for the target assembly process. Ensure the SOT323 package dimensions align with the designated PCB footprint layout.
Selection Notes
Select this component when a P-channel MOSFET with a -50V breakdown voltage is required for low-current switching tasks. The RDS(ON) specification of 10Ω limits suitability to applications where minimal conduction loss is not the primary design constraint. Evaluate thermal dissipation capabilities based on the specified junction-to-ambient thermal resistance values under steady-state conditions.
Part Context
This part belongs to the DMP series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes an SOT323 surface-mount case style constructed from molded plastic compound. The device is designed to balance low on-resistance with efficient switching behavior for compact electronic designs.
Replacement Considerations
Consult official manufacturer substitution guides or contact Diodes Incorporated directly for verified alternative part numbers. Do not assume functional equivalence with other generic P-channel MOSFETs without verifying pinout compatibility and electrical parameter alignment.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current (ID) is -174mA at an ambient temperature of +25°C.
Is this component suitable for life support devices?
No, Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without express written approval.
