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Product Detailed Parameters
- Description：MOSFET P-CH 50V 200MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
- Rds On (Max) @ Id, Vgs：6Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.58 nC @ 4 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：50.54 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：425mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1006-3
- Package / Case：3-UFDFN
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Overview
The DMP56D0UFB-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -50V drain-source breakdown voltage and a continuous drain current of -200mA at +25°C. The device offers low on-resistance, specified as 6Ω at VGS = -4V and ID = -100mA, or 8Ω at VGS = -2.5V and ID = -80mA. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 425mW. The component utilizes an X1-DFN1006-3 package.
Feature Summary
- ESD protected gate structure
- Low input and output leakage characteristics
- Fast switching speed capability
- Lead-free finish with RoHS compliance
Applications
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard part number DMP56D0UFB-7 comes in a tape and reel carrier with a quantity of 3,000 units. An alternative variant, DMP56D0UFB-7B, exists with a different packing quantity of 10,000 units per tape and reel. Ensure the correct suffix matches the required packaging configuration for the manufacturing line.
Selection Notes
Select this component for applications requiring a compact surface-mount solution with low on-state resistance. The X1-DFN1006-3 package provides a small footprint suitable for space-constrained designs. Consider the thermal resistance of 275°C/W and the maximum power dissipation of 425mW when designing the heat dissipation strategy for the PCB layout.
Part Context
This component belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for high-efficiency power management applications where low profile and fast switching are critical requirements.
Replacement Considerations
The DMP56D0UFB-7B is a confirmed substitute part number from the same manufacturer. It shares the identical X1-DFN1006-3 package but differs in the packing quantity provided in the tape and reel carrier.
