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The DMP57D5UFB is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It operates with a drain-source voltage of -50V and a steady-state drain current of -200mA at 25°C. The device features low on-resistance, specified as ≤6Ω at VGS = -4.0V and ≤8Ω at VGS = -2.5V. It includes an ESD protected gate rated for 1kV and complies with AEC-Q101 standards. The component is housed in a DFN1006-3 package.
Verify that the specific ordering suffix matches the required reel size, as quantities vary between 3000 and 10,000 units per reel depending on whether the suffix is -7 or -7B. Confirm compliance with RoHS directives and check for any regional environmental declarations. Ensure the procurement channel is authorized to maintain product integrity and warranty coverage.
Select this component for applications requiring a compact surface-mount solution with high reliability standards. The DFN1006-3 package provides a small footprint suitable for space-constrained designs. Consider the thermal resistance characteristics when designing heat dissipation strategies, as the junction-to-ambient rating is relatively high for this package type.
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is designed for general-purpose switching applications where low power consumption and fast switching speeds are prioritized. The device is qualified for automotive use according to AEC-Q101 standards, indicating suitability for demanding environments.
The datasheet explicitly states that the DMP57D5UFB is not recommended for new designs and recommends using the DMP56D0UFB as a replacement.