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The DMP6018LPS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source breakdown voltage and a maximum continuous drain current of -60A at +25°C case temperature. The device offers a typical on-resistance of 18mΩ at VGS = -10V and 26mΩ at VGS = -4.5V. Packaged in a PowerDI5060-8 surface-mount format, it supports an operating junction temperature range from -55°C to +150°C.
Verify the specific part number against official manufacturer documentation before procurement. Confirm that the required packaging matches the standard tape and reel configuration. Ensure design compatibility with the specified thermal characteristics and package dimensions provided in the datasheet.
Select this component for designs requiring a P-channel MOSFET with a -60V rating. Evaluate the thermal resistance values to ensure adequate heat dissipation for the intended load current. Consider the gate threshold voltage requirements when designing the driving circuitry for optimal switching performance.
This component belongs to the DMP series of P-channel MOSFETs produced by Diodes Incorporated. It utilizes the PowerDI5060-8 package, which provides a compact footprint suitable for space-constrained printed circuit board layouts while maintaining robust electrical performance.
For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade part DMP6018LPSQ. Verify pinout and electrical specifications match before substituting any other components.
No, this specific part is not automotive qualified. For automotive applications requiring AEC-Q qualification, the DMP6018LPSQ variant should be used.
The maximum pulsed drain current (IDM) is -240A, based on a 10μs pulse duration with a duty cycle of 1%.