DMP6023LFGQ-13

$0.81

Description：MOSFET P-CH 60V 7.7A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:79af9af6e44c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 7.7A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：7.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：53.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2569 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 155°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP6023LFGQ-13

Overview

The DMP6023LFGQ-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications. It features a -60V drain-source voltage and low on-resistance of 25mΩ at VGS=-10V and 33mΩ at VGS=-4.5V. The device supports continuous drain currents of -7.7A at +25°C and -6.2A at +70°C. Packaged in a thermally efficient PowerDI3333-8, it operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Low RDS(ON) minimizes on-state power losses
Small form factor package enables higher density designs
Occupies significantly less board area compared to SO-8 packages
Qualified to AEC-Q101 standards with PPAP capability

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity. Confirm that the component meets all necessary automotive qualification requirements, including AEC-Q101 compliance and PPAP documentation, before finalizing procurement specifications.

Selection Notes

Select this component when space constraints are critical due to its compact PowerDI3333-8 footprint. Ensure the application requires a P-channel configuration with a minimum -60V breakdown voltage. Verify thermal management capabilities align with the specified power dissipation ratings under expected operating conditions.

Part Context

This part belongs to the DMP6023 series of automotive-grade P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a lead-free, RoHS-compliant PowerDI package suitable for surface mount assembly.