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The DMP6051SFVW-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (BVDSS) of -60V and a maximum continuous drain current (ID) of -18.8A at +25°C case temperature. The device offers a low on-state resistance (RDS(ON)) of 60mΩ at VGS = -10V and 80mΩ at VGS = -4.5V. Total power dissipation reaches 2.7W at ambient temperature and 43W when thermally biased to the case. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix (-7 or -13) against your bill of materials to confirm the tape and reel packing quantity. Confirm that the application environment does not require automotive-specific change control qualifications such as AEC-Q100/101 or PPAP capability, as standard parts do not inherently include these certifications without explicit manufacturer confirmation.
Select this component for applications requiring a compact surface-mount solution with high current handling capabilities. Ensure the gate drive voltage aligns with the specified RDS(ON) thresholds at -4.5V or -10V. Evaluate thermal management requirements carefully, as the device relies heavily on the exposed drain pad for heat dissipation to achieve its rated power dissipation limits.
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8/SWP (Type UX) package, which provides a small footprint suitable for space-constrained designs. The device is constructed using silicon technology and is fully RoHS compliant, halogen-free, and antimony-free.
DMP6051SFVWQ-7
Standard versions are not automatically qualified for automotive use. For applications requiring AEC-Q100/101/104/200 qualification and IATF 16949 manufacturing, customers must contact Diodes Incorporated directly.
The maximum pulsed drain current (IDM) is -75A, defined by a 10µs pulse duration with a 1% duty cycle.