DMP6051SFVW-7

DMP6051SFVW-7

$0.17
  • Description:IC
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:c5dfcb2f5706 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:18.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:60mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2087 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):2.7W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount, Wettable Flank
  • Supplier Device Package:PowerDI3333-8 (SWP) Type UX
  • Package / Case:8-PowerVDFN

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DMP6051SFVW-7

Overview

The DMP6051SFVW-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (BVDSS) of -60V and a maximum continuous drain current (ID) of -18.8A at +25°C case temperature. The device offers a low on-state resistance (RDS(ON)) of 60mΩ at VGS = -10V and 80mΩ at VGS = -4.5V. Total power dissipation reaches 2.7W at ambient temperature and 43W when thermally biased to the case. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
  • Features wettable flanks to improve optical inspection reliability during manufacturing.
  • Undergoes 100% Unclamped Inductive Switch (UIS) testing in production to ensure robustness.

Applications

  • Motor controls
  • Power-management functions
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix (-7 or -13) against your bill of materials to confirm the tape and reel packing quantity. Confirm that the application environment does not require automotive-specific change control qualifications such as AEC-Q100/101 or PPAP capability, as standard parts do not inherently include these certifications without explicit manufacturer confirmation.

Selection Notes

Select this component for applications requiring a compact surface-mount solution with high current handling capabilities. Ensure the gate drive voltage aligns with the specified RDS(ON) thresholds at -4.5V or -10V. Evaluate thermal management requirements carefully, as the device relies heavily on the exposed drain pad for heat dissipation to achieve its rated power dissipation limits.

Part Context

This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8/SWP (Type UX) package, which provides a small footprint suitable for space-constrained designs. The device is constructed using silicon technology and is fully RoHS compliant, halogen-free, and antimony-free.

Replacement Considerations

DMP6051SFVWQ-7

FAQ

Is the DMP6051SFVW-7 qualified for automotive applications?

Standard versions are not automatically qualified for automotive use. For applications requiring AEC-Q100/101/104/200 qualification and IATF 16949 manufacturing, customers must contact Diodes Incorporated directly.

What is the maximum pulsed drain current for this device?

The maximum pulsed drain current (IDM) is -75A, defined by a 10µs pulse duration with a 1% duty cycle.

DMP6051SFVW-7DMP6051SFVW-7
$0.17
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