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The DMP6051SFVWQ-13 is a 60V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 package and meets AEC-Q101 automotive qualification standards with PPAP capability. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of -60V, a maximum continuous drain current (ID) of -18.8A at +25°C case temperature, and a static drain-source on-resistance (RDS(ON)) of 60mΩ at VGS = -10V. The device supports a pulsed drain current of -75A and operates within a junction temperature range of -55°C to +150°C.
Verify that the ordering suffix matches the required packing quantity, as the -13 suffix indicates a 3000-unit tape and reel configuration. Confirm the specific package variant type UX is compatible with your PCB footprint. Ensure procurement channels are authorized to maintain warranty validity and traceability for automotive-grade components.
Select this component when an automotive-qualified P-channel MOSFET is required for high-current switching applications. The low RDS(ON) minimizes conduction losses, while the robust thermal characteristics support efficient heat dissipation in compact designs. Verify gate drive voltage compatibility, as RDS(ON) varies significantly between -4.5V and -10V logic levels.
This part belongs to the DMP series of power MOSFETs designed by Diodes Incorporated. It is specifically engineered to address the stringent reliability and quality requirements of the automotive industry. The integration of AEC-Q101 qualification distinguishes it from standard industrial counterparts, ensuring suitability for harsh operating environments.
DMP6051SFVWQ-7 is a parameter-equivalent alternative available in a 2000-unit tape and reel packaging format.
Yes, the device is qualified to AEC-Q101 standards and is supported by a PPAP, making it suitable for automotive applications requiring specific change control.
The maximum pulsed drain current (IDM) is rated at -75A, based on a 10µs pulse duration with a 1% duty cycle.