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The DMP6051SFVWQ-7 is a 60V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8/SWP packaging and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of -60V, a maximum continuous drain current (ID) of -18.8A at TC = +25°C, and a static drain-source on-resistance (RDS(ON)) of 60mΩ at VGS = -10V. The device features a total gate charge (Qg) of 36nC at VGS = -10V and supports a pulsed drain current (IDM) of -75A.
Verify the component against the official datasheet DS46266 Rev. 3-2 to confirm authenticity. Ensure the ordering suffix matches the required packing quantity, such as -7 for 2000 units or -13 for 3000 units. Confirm that the supplier provides traceability documentation consistent with automotive industry standards.
Select this component when a low-profile P-channel MOSFET is required for automotive-grade power switching. Consider the 60V rating and 60mΩ on-resistance for efficiency optimization. Evaluate the thermal resistance characteristics relative to the PCB copper area and ambient operating conditions.
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is designed specifically for high-reliability environments requiring strict quality control. The PowerDI3333-8 package offers a compact footprint suitable for space-constrained printed circuit board layouts.
Consult the manufacturer's official substitution guide for verified alternatives. Cross-reference pinouts and electrical ratings before implementation.
Yes, it is AEC-Q101 qualified, supported by a PPAP, and manufactured in IATF 16949 certified facilities.
The maximum continuous drain current is -18.8A at a case temperature of +25°C.