DMP610DL-13

$0.17

Description：MOSFET BVDSS: 41V 60V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:79241ad3d53f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V 60V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：0.56 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：24.6 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：310mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP610DL-13

Overview

The DMP610DL-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source voltage rating and a maximum on-resistance of 10Ω at VGS = -5V. The device supports a continuous drain current of -180mA at +25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in an SOT-23 surface-mount housing, it includes low input capacitance and fast switching characteristics suitable for power management.

Feature Summary

Low on-state resistance designed to minimize power loss
Fast switching speed with low input/output leakage
Low gate threshold voltage for efficient drive requirements
Totally lead-free and fully RoHS compliant construction

Applications

General purpose interfacing switches
Power management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets all applicable environmental directives for your region. Ensure the selected variant aligns with the intended thermal and electrical operating conditions defined in the official datasheet specifications.

Selection Notes

Select this component when a small signal P-channel MOSFET with a -60V rating is required. Consider the low continuous current capability (-180mA) and high on-resistance (10Ω). Evaluate the SOT-23 package constraints against the available PCB space and thermal dissipation requirements for the target application.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for general-purpose applications requiring low on-resistance and superior switching performance. An automotive-compliant version is available under the separate designation DMP610DLQ.