DMP610DLQ-13

$0.03

Description：MOSFET BVDSS: 41V~60V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:69dc171a31e4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：186mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：0.5 nC @ 5 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：520mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP610DLQ-13

Overview

The DMP610DLQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage of -60V and a maximum on-resistance of 10Ω at VGS = -5V. The device supports a continuous drain current of -186mA at +25°C and operates within a temperature range of -55°C to +150°C. Packaged in an SOT23 case, it is designed for low input capacitance and fast switching speed.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications
Low on-resistance and low gate threshold voltage design
Fast switching speed with low input/output leakage characteristics
Manufactured in IATF 16949 certified facilities

Applications

General purpose interfacing switch
Power management functions
Analog switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required AEC-Q101 qualification and PPAP documentation standards for your intended automotive application before finalizing procurement.

Selection Notes

Select this component when a small signal P-channel MOSFET with a -60V rating is required. Ensure the application current does not exceed the -186mA continuous limit at +25°C. Verify that the SOT23 package thermal resistance is sufficient for the expected power dissipation levels in the target circuit design.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered to meet stringent automotive requirements, distinguishing itself through its AEC-Q101 qualification and compliance with IATF 16949 manufacturing standards.