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Product Detailed Parameters
- Description：MOSFET P-CH 60V 4.2A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：110mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：969 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.97W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMP6110SFDF-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source breakdown voltage and a maximum on-resistance of 130mΩ at VGS = -4.5V. The device supports a continuous drain current of -4.2A at +25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in a U-DFN2020-6 (Type F) case, it is supplied in tape and reel quantities of 3,000 units.
Feature Summary
- Designed for high-efficiency power management applications with minimized on-state resistance.
- Features low gate threshold voltage and low input capacitance for fast switching speed.
- Compliant with JEDEC standards for high reliability and fully RoHS compliant.
- Constructed with a green molding compound that is halogen and antimony free.
Applications
- Battery Management Systems
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm the component meets the required environmental standards, specifically RoHS compliance and the absence of intentionally added lead. Ensure the U-DFN2020-6 package dimensions align with the target PCB footprint layout requirements.
Selection Notes
Select this component when a single P-channel MOSFET is required for low-voltage power switching. Evaluate the thermal resistance characteristics against the expected load current and ambient temperature conditions. Consider the gate charge specifications if driving efficiency is critical for the application's switching frequency requirements.
Part Context
This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to balance low on-resistance with superior switching performance. The series targets compact power management solutions where space constraints and efficiency are primary design drivers.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade part number DMP6110SFDFQ. Verify pinout compatibility and electrical parameters before substituting with other generic P-channel MOSFETs.
