DMP6110SFDFQ-13

$0.16

Description：MOSFET P-CH 60V 3.5A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:62a9a41dd9c9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 3.5A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：110mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：969 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：760mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMP6110SFDFQ-13

Overview

The DMP6110SFDFQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -60V drain-source voltage and a maximum continuous drain current of -4.2A at +25°C. The device exhibits a low on-resistance of 110mΩ at VGS=-10V and 130mΩ at VGS=-4.5V. It operates within a junction temperature range of -55°C to +150°C and is housed in a U-DFN2020-6 package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for high reliability
100% unclamped inductive switching tested in production
Low gate threshold voltage and low input capacitance
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Battery management systems
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets all necessary automotive qualification requirements for the intended application. Ensure compatibility with standard surface mount assembly processes.

Selection Notes

Select this component for designs requiring robust automotive-grade performance in compact spaces. Consider the thermal resistance characteristics when determining heat dissipation needs. Evaluate the gate charge parameters against the driving circuit capabilities to ensure optimal switching efficiency.

Part Context

This part belongs to the DMP6110 series from Diodes Incorporated. It is specifically engineered to meet stringent automotive industry standards. The device utilizes silicon technology and is optimized for power switching applications where size and reliability are critical factors.