DMP6110SSSQ-13

$0.68

Description：MOSFET PCH 60V 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9380433a69eb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET PCH 60V 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：3.3A (Ta), 7.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：110mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1030 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMP6110SSSQ-13

Overview

The DMP6110SSSQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage of -60V and a maximum on-resistance of 110mΩ at VGS = -10V, or 130mΩ at VGS = -4.5V. The device supports a continuous drain current of -4.5A at +25°C and -3.6A at +70°C. It operates within a junction temperature range of -55°C to +150°C and is housed in an SO-8 package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Manufactured in IATF 16949 certified facilities
100% Unclamped Inductive Switch (UIS) tested in production
Low input capacitance and fast switching speed

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the component meets the necessary automotive quality standards for your intended application. Ensure compatibility with the target PCB footprint and thermal management requirements before finalizing procurement decisions.

Selection Notes

Select this component when a robust P-channel MOSFET is required for automotive environments. The low gate threshold voltage facilitates efficient drive control. Consider the thermal resistance characteristics and power dissipation limits relative to the expected operating conditions and ambient temperatures.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It is specifically engineered to meet stringent automotive reliability requirements. The device utilizes a green molding compound and is fully lead-free and RoHS compliant.

Replacement Considerations

Check datasheets for alternative P-channel MOSFETs with similar -60V ratings and comparable on-resistance values. Verify pinout compatibility and package dimensions to ensure direct replacement feasibility without PCB redesign.