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Product Detailed Parameters
- Description：MOSFET P-CH 60V 7.3A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：105mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：969 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-23-6
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMP6110SVT-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source breakdown voltage and a maximum continuous drain current of -7.3A at +25°C case temperature. The device offers a low on-resistance of 105mΩ at VGS = -10V and 130mΩ at VGS = -4.5V. Packaged in a TSOT26-6 surface-mount housing, it supports an operating junction temperature range from -55°C to +150°C with a total power dissipation of 1.2W.
Feature Summary
- Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
- Qualified to AEC-Q101 standards for automotive-grade high reliability.
- Totally lead-free and fully RoHS compliant, featuring halogen and antimony-free green molding compound.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The -13 suffix indicates a tape and reel packaging quantity of 10,000 units. Confirm that the required package type matches the TSOT26 form factor and ensure compliance with the specified moisture sensitivity level and solderability standards during assembly.
Selection Notes
Select this component when a single P-channel MOSFET is required for compact power management designs. The TSOT26 package provides a small footprint suitable for space-constrained layouts. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance level, as RDS(ON) varies significantly between -4.5V and -10V gate biases.
Part Context
This part belongs to the DMP6110SVT series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The product line focuses on providing low on-resistance and fast switching speeds within a compact surface-mount package. The series is engineered to support efficient power conversion and management tasks in modern electronic systems.
Replacement Considerations
The datasheet lists the DMP6110SVT-7 as a variant within the same product family. Both share identical electrical characteristics and the TSOT26 package. The primary distinction lies in the packaging format, with the -7 variant supplied in a 3,000-unit tape and reel configuration instead of the 10,000-unit reel.
FAQ
What is the maximum body diode forward current rating?
The maximum body diode forward current (IS) is rated at 7.3A under steady-state conditions at a case temperature of +25°C.
Does the device support avalanche energy ratings?
Yes, the device has a repetitive avalanche energy (EAS) rating of 18mJ and an avalanche current (IAS) rating of -19A, tested with an inductance of 0.1mH.
