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Product Detailed Parameters
- Description：MOSFET P-CH 60V 7.3A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：105mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：969 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-23-6
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMP6110SVT-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source breakdown voltage and a maximum continuous drain current of -7.3A at +25°C case temperature. The device offers a low on-resistance of 105mΩ at VGS = -10V and 130mΩ at VGS = -4.5V. Packaged in a TSOT26-6 surface-mount housing, it supports an operating junction temperature range from -55°C to +150°C with a total power dissipation of 1.2W.
Feature Summary
- Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
- Qualified to AEC-Q101 standards for automotive-grade high reliability.
- Compliant with RoHS directives and halogen/antimony-free green manufacturing requirements.
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental specifications, including UL flammability rating 94V-0 and moisture sensitivity level 1 per J-STD-020 standards before finalizing procurement.
Selection Notes
Select this component when a compact single-channel P-channel switch is required for space-constrained designs. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Consider the thermal resistance characteristics and package limitations when designing for high-current or elevated temperature environments.
Part Context
This part belongs to the DMP6110SVT series of P-channel enhancement mode MOSFETs. It utilizes silicon technology within a molded plastic TSOT26 case. The device is designed to balance low conduction losses with fast switching speeds, making it suitable for modern portable and industrial electronic systems requiring efficient power control.
Replacement Considerations
DMP6110SVTQ-7
FAQ
What is the maximum pulsed drain current capability?
The device can withstand a pulsed drain current of -24A for a duration of 380µs with a 1% duty cycle.
Does the component include protection against avalanche conditions?
Yes, the datasheet specifies ratings for avalanche current (-19A) and repetitive avalanche energy (18mJ) based on low frequency and duty cycles to maintain a junction temperature of +25°C.
