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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V-60V U-DFN2020-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：155mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：612 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMP6250SFDF-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 (Type F) case with a maximum drain-source voltage of -60V and a gate-source voltage rating of ±20V. The device offers a maximum on-resistance of 155mΩ at VGS = -10V and 240mΩ at VGS = -4.5V, supporting continuous drain currents up to -3.2A at +25°C. Key electrical parameters include a gate threshold voltage of -3V max, total gate charge of 8.9nC at VGS = -10V, and an operating temperature range from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management.
- Features low gate threshold voltage and low input capacitance to facilitate fast switching speeds.
- Constructed with totally lead-free materials that are fully RoHS compliant and free of halogens and antimony.
Applications
- Battery Management Systems
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm compliance requirements such as RoHS and halogen-free status against current project specifications. Ensure the U-DFN2020-6 package dimensions align with the PCB footprint design guidelines provided in the datasheet.
Selection Notes
Select this component when a compact P-channel MOSFET with a -60V breakdown voltage is required for space-constrained designs. The U-DFN2020-6 package provides thermal efficiency suitable for applications requiring moderate current handling. Evaluate the 155mΩ on-resistance specification against system power loss constraints at the intended operating gate drive voltage.
Part Context
This part belongs to the DMP series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. These devices utilize silicon technology optimized for low on-resistance and fast switching characteristics. The product line targets general-purpose power management solutions where small form factors and high reliability are prioritized over extreme current capabilities.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, consult the related automotive grade parts with the 'Q-suffix'. Verify pinout compatibility and thermal resistance values when substituting with other U-DFN2020-6 packages from different manufacturers.
FAQ
What is the maximum pulsed drain current capability?
The maximum pulsed drain current is -12A, based on a 10μs pulse duration with a 1% duty cycle.
Is this component qualified for automotive use?
This specific part is qualified to JEDEC standards for high reliability. For automotive applications requiring AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix.
