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The DMP6350SQ is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -60V drain-source voltage and low on-resistance of 350mΩ at VGS=-10V and 550mΩ at VGS=-4.5V. The device supports a continuous drain current of -1.5A at +25°C and -1.2A at +70°C, with a pulsed current capability of -6A. Operating junction temperature ranges from -55°C to +150°C. It utilizes an SOT-23 package and meets AEC-Q101 standards.
Verify the specific ordering suffix (e.g., -7 or -13) to confirm the required tape and reel packaging quantity. Ensure the component matches the exact AEC-Q101 qualification requirements for your target automotive application. Confirm that the SOT-23 package dimensions align with your PCB layout constraints before finalizing procurement.
Select this component when designing circuits requiring a -60V P-channel MOSFET with strict automotive reliability standards. Consider the thermal resistance values and maximum power dissipation limits based on your expected operating ambient temperatures. Evaluate the gate threshold voltage range to ensure compatibility with your system's logic drive levels.
This part belongs to Diodes Incorporated's portfolio of automotive-grade discrete semiconductors. It is specifically engineered to meet the stringent demands of vehicle electronics, offering robust performance in harsh environments while maintaining compliance with environmental directives such as RoHS and REACH.
Consult official Diodes Incorporated documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before replacing existing components in production designs.
The maximum pulsed drain current is -6A, specified under conditions of a 10µs pulse duration and a 1% duty cycle.
Yes, the device is qualified to AEC-Q101 standards and is PPAP capable, making it suitable for demanding automotive environments.