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Product Detailed Parameters
- Description：MOSFET BVDSS: 501V~650V SO-8 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：270mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：11Ohm @ 270mA, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：670 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.9W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMP65H11D0HSS is a 600V P-channel enhancement mode MOSFET designed for high-efficiency power management applications. It features an SO-8 (Standard B) package with a maximum drain-source voltage of -600V and a static on-resistance of 11Ω at VGS = -10V. The device supports a continuous drain current of -0.27A at +25°C, with a peak pulsed drain current of -2.3A. Thermal characteristics include a junction-to-ambient thermal resistance of 65°C/W on a standard FR-4 board. Operating and storage temperatures range from -55°C to +150°C.
Feature Summary
- Low on-resistance for improved efficiency
- High breakdown voltage rating suitable for demanding power applications
- Fast switching performance with low input capacitance
Applications
- Motor control systems
- Backlighting circuits
- AC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 4,000 units per reel. Confirm that the component meets RoHS 2 and RoHS 3 directives, as well as halogen and antimony-free requirements. Ensure the selected variant aligns with the required automotive qualification standards if applicable to the design.
Selection Notes
Select this component when designing circuits requiring a P-channel MOSFET with a minimum 600V drain-source voltage rating. Evaluate the 11Ω on-resistance against the expected load current to ensure acceptable conduction losses. Consider the SO-8 package dimensions and thermal dissipation capabilities relative to the available PCB copper area for adequate heat management.
Part Context
This part belongs to Diodes Incorporated's advanced information series of power MOSFETs. It utilizes a molded plastic case material classified as UL 94V-0 flammability rated. The terminals are finished with matte tin annealed over a copper leadframe, ensuring solderability according to MIL-STD-208 standards.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided datasheet.
FAQ
What is the maximum body diode forward recovery dv/dt rating?
The peak diode recovery dv/dt is rated at 5 V/ns.
How does the gate threshold voltage vary with temperature?
The gate threshold voltage typically ranges from -2V to -4V at +25°C and exhibits variation across the operating temperature range from -55°C to +150°C.
