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Product Detailed Parameters
- Description：MOSFET BVDSS: 501V~650V SO-8 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：13Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.4 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：582 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.9W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMP65H13D0HSS is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -600V drain-source voltage rating and a maximum on-resistance of 13Ω at VGS = -10V. The device supports a continuous drain current of -0.25A at +25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in an SO-8 (Standard B) case, it utilizes a matte tin annealed over copper leadframe finish.
Feature Summary
- Designed for high-efficiency power management applications with minimized on-state resistance.
- Features low input capacitance and fast switching performance.
- Totally lead-free and fully RoHS compliant.
- Halogen and antimony free "Green" device.
Applications
- Motor Control
- Backlighting
- AC-DC Converters
Procurement Notes
Verify the specific datasheet revision DS43631 Rev. 3 - 2 when sourcing components. Confirm that the SO-8 package matches the required footprint dimensions. Ensure compliance with moisture sensitivity level 3 per J-STD-020 standards during storage and handling procedures.
Selection Notes
Select this component for circuits requiring high breakdown voltage ratings combined with moderate current capabilities. Evaluate thermal resistance parameters against the expected ambient temperature conditions. Verify gate threshold voltage compatibility with the intended control logic levels.
Part Context
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is designed to balance low on-resistance with superior switching performance. The product summary indicates its suitability for general power management tasks where efficiency is a priority.
Replacement Considerations
No public substitute part numbers are documented in the provided source material.
FAQ
What is the maximum body diode forward current?
The maximum body diode forward current is -0.25A at TA = +25°C and -0.20A at TA = +70°C.
Is the device suitable for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification or IATF 16949 manufacturing, customers must contact Diodes Incorporated directly.
