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Product Detailed Parameters
- Description：DIODE
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：65 V
- Current - Continuous Drain (Id) @ 25°C：215mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 5V
- Rds On (Max) @ Id, Vgs：8Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：42 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：700mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1006-3
- Package / Case：3-UFDFN
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Overview
The DMP68D1LFB-7B is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -65V drain-source voltage (VDSS) and operates in the X1-DFN1006-3 surface-mount package. The device provides a maximum continuous drain current of -290mA at +25°C, with an on-state resistance (RDS(ON)) of 8Ω at VGS = -5V and 18Ω at VGS = -2.5V. Key electrical parameters include a gate threshold voltage ranging from -0.8V to -2.1V, total gate charge of 0.6nC, and input capacitance of 42pF. Thermal characteristics specify a power dissipation of 0.7W to 1.2W depending on board conditions, with a junction-to-ambient thermal resistance between 100°C/W and 180°C/W.
Feature Summary
- Low on-resistance for high efficiency power management
- Fast switching speed with low input/output leakage
- ESD protected design
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors
Procurement Notes
Verify the specific ordering suffix '-7B' against official Diodes documentation to confirm packaging details and tape-and-reel quantities. Ensure compliance with environmental directives such as RoHS 3 and REACH requirements. Confirm that the X1-DFN1006-3 package dimensions align with your PCB footprint specifications before finalizing procurement.
Selection Notes
Select this component when a compact P-channel MOSFET with a -65V rating is required for space-constrained designs. Evaluate the RDS(ON) values at your specific gate drive voltages (-2.5V or -5V) to ensure adequate conduction performance. Consider the thermal resistance limits and power dissipation capabilities relative to your expected operating temperature range and board copper area.
Part Context
This part belongs to the DMP68D1L family of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the X1-DFN1006-3 case style, which offers a small form factor suitable for modern surface-mount assembly processes. The device is designed to minimize on-state resistance while maintaining superior switching performance for efficient power management applications.
Replacement Considerations
Consult official Diodes documentation for verified substitute part numbers. Cross-reference pinouts, voltage ratings, and package dimensions carefully when considering alternative components.
