DMPH3010LK3-13

$1.17

Description：MOSFET P-CHANNEL 30V 50A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3a138d54d6de Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CHANNEL 30V 50A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：139 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6807 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.9W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMPH3010LK3-13

Overview

The DMPH3010LK3-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO-252 (DPAK) surface-mount package and operates within a junction temperature range of -55°C to +175°C. The device provides a drain-source voltage rating of -30V and supports continuous drain currents up to -50A at case temperatures of +25°C. Key electrical parameters include a maximum on-resistance of 7.5mΩ at VGS=-10V and 10mΩ at VGS=-4.5V, with a gate-source voltage limit of ±20V.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Qualified to AEC-Q101 standards for automotive reliability
Verified for 100% unclamped inductive switching performance during production
Designed to minimize on-state resistance while maintaining fast switching speeds

Applications

DC-DC Converters
Power Management Functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS directives and is halogen and antimony-free as defined by the manufacturer's green product specifications. Ensure the application environment remains within the specified thermal limits to maintain the rated current capabilities.

Selection Notes

Select this component when high-temperature resilience up to +175°C is required for power management circuits. The low on-resistance characteristics make it suitable for applications demanding high efficiency. Verify that the system can accommodate the TO-252 package dimensions and that the gate drive voltage aligns with the threshold requirements for optimal conduction.

Part Context

This part belongs to the DMPH3010LK3 series of P-channel MOSFETs from Diodes Incorporated. It utilizes a molded plastic case with a matte tin finish over a copper leadframe. The device is classified under Level 1 moisture sensitivity per J-STD-020 and carries a UL flammability rating of 94V-0 for the casing material.

Replacement Considerations

Consult official substitution lists or cross-reference tools provided by Diodes Incorporated for verified equivalent parts. Do not substitute with generic P-channel MOSFETs without confirming matching voltage ratings, current capabilities, and thermal resistance values.