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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V PowerDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：81 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3775 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.7W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type Q)
- Package / Case：8-PowerTDFN
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Overview
The DMPH33M8SPSWQ is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -30V drain-source voltage and a maximum continuous drain current of -100A at +25°C case temperature. The device exhibits a low on-resistance of 3.8mΩ at VGS = -10V and 10mΩ at VGS = -6V. It operates within a junction temperature range of -55°C to +175°C and is housed in a PowerDI5060-8 package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP support for automotive use
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching (UIS) tested in production
- Thermally efficient package design for high conversion efficiency
Applications
- Automotive switches
- High ambient temperature environments
- Thin application designs
Procurement Notes
Verify the specific ordering suffix matches the required packing quantity, as the standard variant utilizes a tape and reel carrier with a quantity of 2,500 units. Confirm that the component meets RoHS compliance requirements and ensure the manufacturing facility holds IATF 16949 certification for automotive grade parts. Cross-reference the date code marking to confirm production recency.
Selection Notes
Select this component when designing circuits requiring robust performance under high thermal stress or demanding automotive conditions. The low on-resistance minimizes conduction losses, while the wide operating temperature range ensures reliability in harsh environments. Ensure gate drive voltages align with the specified thresholds for optimal switching characteristics.
Part Context
This part belongs to Diodes Incorporated's advanced MOSFET portfolio, specifically engineered for stringent automotive reliability standards. It integrates high current handling capabilities within a compact surface-mount footprint, addressing the industry demand for efficient power management solutions in space-constrained electronic systems.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers before implementation. Do not assume functional equivalence based solely on similar electrical ratings without confirming pinout compatibility and thermal specifications.
