DMPH4009SPSWQ-13

$0.39

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:a939060063d3 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：83.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5697 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：4.6W (Ta), 143W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMPH4009SPSWQ-13

Overview

The DMPH4009SPSWQ is a P-channel enhancement mode MOSFET rated for -40V drain-source voltage and operating up to +175°C. It utilizes the PowerDI5060-8/SWP package. Maximum on-resistance is 11mΩ at VGS = -10V and 19mΩ at VGS = -4.5V, both measured at ID = -9.8A. Continuous drain current reaches -83.4A at TC = +25°C. The device supports pulsed drain currents of -333.6A with a 10µs pulse width and 1% duty cycle.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications
Wettable flank design enables improved optical inspection of solder joints
Rated for high ambient temperature environments with operation up to +175°C
Manufactured in IATF 16949 certified facilities

Applications

DC-DC converters
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the PowerDI5060-8/SWP (Type UX) package dimensions align with the target PCB footprint. Ensure the selected component meets the required RoHS and halogen-free specifications for the intended assembly process.

Selection Notes

Select this component when a single P-channel MOSFET requires low on-resistance within a compact surface-mount form factor. The -40V rating suits lower voltage power rails. Verify gate drive levels can achieve the specified RDS(ON) thresholds. Consider the thermal resistance characteristics for the expected continuous current loads in the final enclosure.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio designed for high reliability. It integrates standard N-channel functionality into a P-channel architecture optimized for switching efficiency. The PowerDI family provides enhanced thermal performance compared to traditional leaded packages while maintaining small board space requirements.