DMPH4013SK3-13

$0.94

Description：MOSFET P-CH 40V 55A TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6aa46f01e12f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V 55A TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：67 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4004 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMPH4013SK3-13

Overview

The DMPH4013SK3-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO252 (DPAK) surface-mount package with a -40V drain-source voltage rating and a continuous drain current of -55A at +25°C case temperature. The device exhibits a maximum on-resistance of 15mΩ at VGS=-10V and 23mΩ at VGS=-4.5V. It supports an operating junction temperature range from -55°C to +175°C and is qualified to AEC-Q101 standards for automotive reliability.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Designed to minimize on-state resistance while maintaining superior switching performance
Qualified to AEC-Q101 standards for high reliability applications
100% unclamped inductive switching (UIS) tested in production

Applications

Reverse polarity protection
Motor control
Power management

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the standard DMPH4013SK3 variant meets your thermal requirements, as a separate automotive-compliant part number exists under different documentation. Ensure component authenticity through authorized distribution channels to maintain AEC-Q101 qualification integrity.

Selection Notes

Select this component for designs requiring robust P-channel switching with low conduction losses. The TO252 package provides efficient heat dissipation via the exposed pad. Verify gate drive voltages align with the specified thresholds for optimal RDS(ON) performance. Consider the thermal resistance characteristics when designing PCB copper planes to ensure junction temperatures remain within the specified operational limits during continuous load conditions.

Part Context

This device belongs to the DMPH series of power MOSFETs designed for high-efficiency power management. It utilizes silicon technology to achieve low on-resistance and fast switching speeds. The product line emphasizes reliability through rigorous testing protocols, including UIS validation, making it suitable for demanding industrial and automotive electronic systems requiring durable semiconductor solutions.

Replacement Considerations

An automotive-compliant version is available under the separate datasheet designation DMPH4013SK3Q. Verify pinout compatibility and thermal characteristics when substituting similar P-channel MOSFETs from other manufacturers to ensure equivalent electrical performance and physical footprint integration.