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Product Detailed Parameters
- Description：MOSFET P-CHANNEL 40V 45A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：91 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：4234 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.3W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMPH4015SK3-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source breakdown voltage and an on-resistance of 11mΩ at VGS=-10V, supporting a continuous drain current of -45A at TC=+25°C. The device operates within a junction temperature range of -55°C to +175°C and includes a maximum gate-source voltage rating of ±25V.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Qualified to AEC-Q101 standards for automotive reliability
- 100% unclamped inductive switching (UIS) tested in production
Applications
- DC-DC Converters
- Power Management Functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS directives and halogen-free requirements as specified in the manufacturer's documentation. Ensure compatibility with standard TO-252 surface mount pad layouts during integration.
Selection Notes
Select this component for applications requiring low on-state resistance combined with fast switching performance. Consider the thermal characteristics and power dissipation limits when designing heat sinks or PCB copper planes. Verify that the gate drive voltage aligns with the specified thresholds for optimal conduction efficiency.
Part Context
This part belongs to the DMPH series of P-channel MOSFETs from Diodes Incorporated. It utilizes a TO-252 case package designed for surface mounting. The product line emphasizes minimized on-resistance while maintaining superior switching capabilities for efficient power management solutions.
Replacement Considerations
Consult official substitution lists for verified equivalents. Cross-reference parameters such as RDS(ON), ID ratings, and package dimensions before implementation.
