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Product Detailed Parameters
- Description：MOSFET P-CH 40V 50A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：91 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：4234 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.6W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMPH4015SPS-13 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an 8-pin PowerDI5060 surface-mount package. The device features a drain-source breakdown voltage of 40 V and supports a continuous drain current of 69 A at case temperature. Its maximum on-resistance is 13 mΩ, with a gate threshold voltage of 3 V and a total gate charge of 87 nC. It operates within a junction temperature range of -55°C to +175°C and carries AEC-Q101 automotive qualification.
Feature Summary
- Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in demanding environments.
- Low on-resistance design facilitates efficient power switching and minimizes conduction losses.
- Compact PowerDI5060-8 package enables high-density surface-mount assembly.
Applications
- Automotive load switching circuits
- Power distribution management systems
- High-side switch applications
Procurement Notes
Verify the specific suffix against official Diodes Incorporated documentation to confirm package type and automotive qualification status. Ensure the ordering part number matches the required PowerDI5060-8 configuration. Cross-reference datasheet revisions to validate electrical parameters before integration into final designs.
Selection Notes
Select this component for applications requiring automotive certification and low on-resistance in a compact footprint. Compare the 13 mΩ on-resistance and 69 A current rating against system requirements. Evaluate thermal dissipation capabilities within the PowerDI5060-8 package constraints for the intended operating environment.
Part Context
This component belongs to the DMPH series of P-channel MOSFETs from Diodes Incorporated. The series focuses on automotive-grade solutions utilizing advanced silicon processes. The PowerDI5060-8 packaging provides enhanced thermal performance compared to traditional packages while maintaining a small board area.
Replacement Considerations
Consult official substitution guides for verified alternatives. Verify pinout compatibility and electrical parameter alignment when considering cross-references.
