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The DMPH4016SSS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source breakdown voltage and operates up to +175°C junction temperature. The device provides a maximum on-resistance of 11mΩ at VGS=-10V and 15mΩ at VGS=-4.5V, with continuous drain currents of -11A at 25°C and -8A at 100°C. Packaged in an SO-8 footprint, it includes 100% UIS testing and meets RoHS standards.
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental directives, including RoHS 2 and RoHS 3 compliance requirements. Ensure the selected variant aligns with the required thermal management capabilities for high ambient temperature environments.
Select this component when designing circuits requiring robust performance in elevated temperature conditions up to +175°C. The low on-resistance characteristics make it suitable for applications demanding high efficiency. Verify that the SO-8 package dimensions and thermal resistance values meet the specific constraints of the target printed circuit board layout.
This part belongs to the DMPH4016SSS series of P-channel enhancement mode MOSFETs from Diodes Incorporated. The product line is engineered to minimize on-state resistance while maintaining superior switching performance. It utilizes a molded plastic green molding compound with UL flammability classification rating 94V-0.
Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on similar electrical ratings or package types without explicit confirmation from the supplier.
For automotive applications requiring specific change control, AEC-Q100/101/104/200 qualification, PPAP capability, and manufacturing in IATF 16949 certified facilities, contact Diodes Incorporated directly.
The maximum avalanche energy rating is 338 mJ when measured with an inductance of 1mH.