DMPH4016SSSQ-13

$0.38

Description：MOSFET BVDSS: 31V~40V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:c58e0d8c41d1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5697 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.9W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMPH4016SSSQ-13

Overview

The DMPH4016SSSQ is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -40V drain-source voltage and operates up to +175°C junction temperature. The device achieves an on-resistance of 11mΩ at -10V gate drive and 15mΩ at -4.5V. Continuous drain current is rated at -11A at +25°C ambient, with a pulsed current capacity of -121A. Packaged in an SO-8 footprint, it supports low input capacitance and includes 100% UIS testing.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive environments
Rated for operation in high ambient temperatures up to +175°C
Features low on-resistance and low input capacitance for efficient switching
Manufactured in IATF 16949 certified facilities with full RoHS compliance

Applications

DC-DC converters
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets all applicable automotive quality standards for your intended design. Ensure thermal management aligns with the specified power dissipation limits under your operating conditions.

Selection Notes

Select this component when designing circuits requiring robust performance in high-temperature automotive environments. Consider the SO-8 package constraints for thermal dissipation. Evaluate the gate threshold voltage requirements against your driver capabilities to ensure reliable turn-on characteristics.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes silicon technology optimized for high reliability. The product line emphasizes compliance with strict automotive industry standards while maintaining competitive electrical performance metrics.