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Product Detailed Parameters
- Description：MOSFET P-CHANNEL 60V 35A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：33mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：53.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2569 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.2W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMPH6023SK3-13 is a P-channel enhancement mode MOSFET in a TO252 (DPAK) package. It features a drain-source voltage of -60V and a continuous drain current of -35A at +25°C case temperature. The on-resistance is 33mΩ at VGS=-10V and 40mΩ at VGS=-4.5V. It supports an operating junction temperature up to +175°C, has a gate-source voltage rating of ±20V, and total gate charge of 53.1nC at VGS=-10V.
Feature Summary
- Qualified to AEC-Q101 standards for high reliability automotive applications
- Rated for operation up to +175°C junction temperature
- Features 100% unclamped inductive switching capability
Applications
- Engine Management Systems
- Body Control Electronics
- DCDC Converters
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable RoHS directives and environmental compliance requirements for the intended deployment region. Ensure the supplier provides valid traceability documentation consistent with automotive quality standards.
Selection Notes
Select this component when designing circuits requiring robust performance in high ambient temperature environments. Consider the low input capacitance and fast switching characteristics for efficient power management. Verify thermal dissipation capabilities align with the system's heat sink or PCB copper layout constraints.
Part Context
This device belongs to Diodes Incorporated's advanced P-channel MOSFET portfolio designed specifically for automotive electronics. It utilizes a TO252 (DPAK) surface-mount case constructed from green molding compound. The product is manufactured using silicon technology and is intended for use in demanding electronic control units.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalent part numbers. Do not assume functional compatibility based solely on matching voltage or current ratings without reviewing detailed electrical parameter differences.
