DMS2220LFW-7

$0.14

Description：MOSFET P-CH 20V 2.9A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:fbd73b493207 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 2.9A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：95mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：632 pF @ 10 V
FET Feature：Schottky Diode (Isolated)
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN3020 (3x2)
Package / Case：8-VDFN Exposed Pad

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DMS2220LFW-7

Overview

The DMS2220LFW-7 is a P-channel enhancement mode MOSFET with an integrated Super Barrier Rectifier (SBR) in a DFN3020-8 package. The MOSFET features a -20V drain-source voltage and up to -2.9A continuous drain current. On-resistance is 95mΩ at VGS=-4.5V, 120mΩ at VGS=-2.5V, and typically 86mΩ at VGS=-1.8V. Gate threshold voltage is max -1.3V. The SBR provides a 35V reverse voltage rating and 1A average forward current. Operating temperature range is -55°C to +150°C.

Feature Summary

Integrates a low on-resistance P-channel MOSFET with a Super Barrier Rectifier for combined switching and rectification capabilities.
Features fast switching speed and low input/output leakage characteristics.
Designed for high reliability applications with AEC-Q101 qualification.
Utilizes a low profile DFN3020-8 case with lead-free/RoHS compliant construction.

Applications

Automotive power management systems
Low voltage DC/DC converter circuits
High-side load switch designs

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the DFN3020-8 footprint matches your PCB layout requirements. Ensure component sourcing aligns with the manufacturer's current production status and quality certifications.

Selection Notes

Select this component when a compact solution combining a P-channel MOSFET and a Schottky-like rectifier is required. The low gate threshold voltage facilitates drive from low-voltage logic levels. Verify thermal dissipation needs against the 1.5W power dissipation rating under your specific ambient conditions.

Part Context

This device belongs to Diodes Incorporated's portfolio of integrated power solutions. It combines discrete semiconductor functions into a single molded plastic package. The technology utilizes a Super Barrier Rectifier structure to minimize forward voltage drop compared to standard Schottky diodes.