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Product Detailed Parameters
- Description：MOSFET N-CH POWERDI3333-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 10.4A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45.7 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：4310 pF @ 15 V
- FET Feature：Schottky Diode (Body)
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMS3014SFG-13 is a 30V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a maximum on-state resistance of 13mΩ at VGS=10V and 14mΩ at VGS=4.5V, supporting continuous drain currents up to 9.5A at 25°C. The device integrates a Schottky diode to minimize conduction losses and switching energy. Key electrical parameters include a gate threshold voltage range of 1.0V to 2.2V, total gate charge of 45.7nC at VGS=10V, and a reverse recovery charge of 8.0nC. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrates a MOSFET and Schottky diode on a single die to reduce body diode conduction losses and switching energy.
- Utilizes a patented process to achieve low on-state resistance while maintaining superior high-frequency switching performance.
- Features a small form factor thermally efficient package that occupies significantly less board area compared to traditional SO-8 packages.
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify component status before procurement as the datasheet explicitly states this part is not recommended for new design with no alternate part available. Confirm packaging options such as tape and reel quantities against current manufacturing capabilities. Ensure compliance with RoHS and AEC-Q101 standards if required by your specific application environment. Check for any recent product change notifications or end-of-life announcements directly from the manufacturer.
Selection Notes
Select this component for applications requiring compact power solutions with integrated body diode characteristics. Consider the thermal resistance values when designing heat dissipation strategies for steady-state versus transient conditions. Evaluate the gate charge requirements against your driver capabilities to ensure optimal switching speeds. Verify that the 30V breakdown voltage aligns with your system's maximum operating voltages.
Part Context
This component belongs to the DMS30 series of MOSFETs from Diodes Incorporated, designed for high-efficiency power management. It is part of the DIOFET family, which combines MOSFET and Schottky technologies. The PowerDI3333-8 package is engineered for surface mount assembly, offering improved thermal performance and space savings over conventional packages.
Replacement Considerations
The datasheet explicitly states there is no alternate part available for this component. Designers should consider redesigning their circuitry rather than seeking a direct substitute due to the unique integration of the Schottky diode and specific package dimensions.
