ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 9.5A PWRDI3333-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：14.5mOhm @ 10.4A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.3 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：4310 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
Download product information
Overview
The DMS3014SFGQ-13 is a 30V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a maximum drain-source voltage of 30V and continuous drain currents ranging from 7.4A to 9.5A depending on temperature and gate drive. The device offers a low on-resistance of 14.5mΩ at VGS=10V and 15.5mΩ at VGS=4.5V. It integrates a Schottky diode with a forward voltage of 0.55V max and reverse recovery charge of 8.0nC. Operating within -55°C to +150°C, it meets AEC-Q101 automotive standards.
Feature Summary
- Monolithic integration of a MOSFET and Schottky diode to minimize conduction and switching losses
- Automotive qualification compliant with AEC-Q101 standards and PPAP capable
- Small form factor thermally efficient package enabling higher density end products
- 100% avalanche rated and tested for reliability
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix (e.g., -13 for 3000 units per reel) against current manufacturer documentation, as packaging quantities may vary. Confirm RoHS compliance and lead-free status requirements for your assembly process. Ensure the component matches the exact PowerDI3333-8 footprint and pin configuration before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high reliability in automotive environments. Consider the integrated Schottky diode benefits for reducing body diode switching losses. Evaluate thermal performance based on the specified junction-to-ambient resistance values under your expected PCB copper area constraints.
Part Context
This part belongs to the DMS30 series of automotive-grade MOSFETs by Diodes Incorporated. These devices utilize the DIOFET patented process to combine power switching and rectification capabilities in a single die, optimizing board space and efficiency for compact electronic designs.
Replacement Considerations
DMS3012SFG-13: Similar 30V N-channel MOSFET but with different current ratings and potentially distinct electrical characteristics; verify datasheet compatibility.
