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Product Detailed Parameters
- Description：MOSFET N-CH 30V 9.5A PWRDI3333-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：14.5mOhm @ 10.4A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.3 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：4310 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMS3014SFGQ-7 is a 30V N-channel enhancement mode MOSFET in the PowerDI3333-8 package. It features a maximum drain-source on-resistance of 14.5mΩ at VGS=10V and 15.5mΩ at VGS=4.5V, with a continuous drain current of 9.5A at VGS=10V. The device integrates a Schottky diode to minimize body diode conduction losses and switching losses. It is qualified to AEC-Q101 standards for automotive applications.
Feature Summary
- Integrates a MOSFET and a Schottky diode on a single die to reduce conduction and switching losses
- Occupies only 33% of the board area compared to SO-8 packages for higher density designs
- Rated for 100% unclamped inductive switching (UIS) and tested for gate resistance
- Qualified to AEC-Q101 standards and capable of PPAP for automotive reliability
Applications
- Automotive backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix (-7 or -13) to confirm the tape and reel quantity, as the base part number covers multiple packaging options. Confirm that the application environment meets the specified operating temperature range of -55°C to +150°C. Ensure the PCB layout adheres to the recommended pad dimensions for the PowerDI3333-8 case to achieve the stated thermal performance.
Selection Notes
Select this component when a compact form factor is required alongside low conduction losses in 30V systems. The integrated Schottky feature makes it suitable for high-frequency switching applications where body diode reverse recovery characteristics are critical. Verify that the gate drive voltage aligns with the specified RDS(ON) test conditions for optimal efficiency.
Part Context
This device belongs to the DMS series from Diodes Incorporated, designed specifically for automotive-grade requirements. It utilizes the DIOFET patented process technology to combine power switching and rectification capabilities. The PowerDI3333-8 package provides a thermally efficient solution for space-constrained printed circuit board layouts.
Replacement Considerations
Direct substitutes must match the 30V rating, N-channel configuration, and PowerDI3333-8 footprint. Verify that any replacement also offers an integrated Schottky diode if body diode performance is a design constraint. Check that the replacement is AEC-Q101 qualified if automotive compliance is mandatory.
