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Product Detailed Parameters
- Description：MOSFET N-CH 30V 10.4A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：10.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 10.4A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45.7 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：2296 pF @ 15 V
- FET Feature：Schottky Diode (Body)
- Power Dissipation (Max)：1.55W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMS3014SSS-13 is an N-channel enhancement mode MOSFET with a monolithically integrated Schottky diode in an SO-8 package. It features a drain-source voltage of 30V, continuous drain current of 10.4A at 25°C, and on-resistance of 9mΩ at VGS=10V. The device includes avalanche ruggedness ratings (IAR 30A, EAR 45mJ) and operates from -55°C to +150°C.
Feature Summary
- Monolithic integration of an N-channel MOSFET and a Schottky diode on a single die
- Low reverse recovery charge (Qrr) for the integrated Schottky to reduce body diode switching losses
- Avalanche rugged design rated for repetitive avalanche energy
- Qualified to AEC-Q101 standards for high reliability
Applications
- High-frequency power conversion circuits requiring low shoot-through risk
- Automotive electronics applications demanding high reliability
- Power management systems utilizing synchronous rectification
Procurement Notes
Verify component authenticity through authorized Diodes Incorporated channels. Confirm RoHS compliance and lead-free status against latest datasheet revisions. Ensure storage conditions meet J-STD-020 moisture sensitivity level 1 requirements prior to soldering. Validate PCB pad layout dimensions match the provided SO-8 mechanical data.
Selection Notes
Select this component for designs prioritizing reduced conduction losses via low RDS(ON) and minimized body diode switching losses. The integrated Schottky diode eliminates external components, saving board space. Consider the specific gate capacitance ratio to ensure stability in high-frequency switching environments.
Part Context
This part belongs to the DMS30 series of DIOFETs by Diodes Incorporated. These devices utilize a patented process to combine MOSFET and Schottky technologies. The SO-8 case provides a compact footprint suitable for surface-mount assembly while maintaining thermal performance within specified limits.
Replacement Considerations
The datasheet explicitly states 'NOT RECOMMENDED FOR NEW DESIGN' and 'NO ALTERNATE PRODUCT'. No verified substitute part numbers are available in the official documentation.
