ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 7A POWERDI3333-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 11.2A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44.6 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：1886 pF @ 15 V
- FET Feature：Schottky Diode (Body)
- Power Dissipation (Max)：980mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
Download product information
Overview
The DMS3016SFG-7 is an N-channel enhancement mode MOSFET with an integrated Schottky diode, manufactured by Diodes Incorporated. It utilizes the DIOFET patented process to monolithically integrate a MOSFET and a Schottky in a single die. The device features a maximum drain-source voltage (BVDSS) of 30V. At VGS = 10V, the maximum on-resistance (RDS(ON)) is 13mΩ with a continuous drain current (ID) of 10.2A at TA = +25°C. At VGS = 4.5V, RDS(ON) is 16mΩ with ID of 9.3A. The package is PowerDI3333-8.
Feature Summary
- DIOFET technology integrates a MOSFET and Schottky diode in a single die to minimize conduction losses and body diode switching losses.
- Low gate capacitance ratio reduces the risk of shoot-through or cross-conduction currents at high frequencies.
- Avalanche rugged design rated for repetitive avalanche energy (EAR) and avalanche current (IAR).
- Small form factor thermally efficient package occupies significantly less board area compared to SO-8 packages.
Applications
- DC-DC Converters
- Power Management Functions
- Analog Switch
Procurement Notes
Verify component authenticity through authorized channels as the datasheet indicates this part is not recommended for new designs. Confirm packaging specifications match requirements, specifically the tape and reel format associated with the -7 suffix. Ensure compliance with RoHS and halogen-free standards if required by the application environment.
Selection Notes
Select this component for applications requiring low on-state resistance and superior switching performance within a 30V rating. Consider the integrated Schottky diode benefits for reducing reverse recovery losses. Evaluate thermal management needs based on the PowerDI3333-8 package characteristics and specified thermal resistance values under different mounting conditions.
Part Context
The DMS3016SFG-7 belongs to the DMS30 series from Diodes Incorporated, designed for high-efficiency power management. It represents a generation of MOSFETs optimized to balance low on-resistance with fast switching capabilities. The device is housed in a compact PowerDI3333-8 package, suitable for space-constrained designs.
Replacement Considerations
The datasheet explicitly states: NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART. No official substitute part numbers are provided by the manufacturer for this specific component.
FAQ
What is the maximum repetitive avalanche energy (EAR) rating?
The maximum repetitive avalanche energy (EAR) rating is 24 mJ, measured with an inductance (L) of 0.3mH.
How does the DIOFET process benefit switching performance?
The DIOFET process integrates a MOSFET and Schottky diode in a single die, delivering low Qrr which reduces body diode switching losses and a low gate capacitance ratio that minimizes shoot-through risks.
