DMT10H009LFG-7

$0.42

Description：MOSFET N-CH 100V 13A/50A PWRDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:24b6846954e1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 13A/50A PWRDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2361 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMT10H009LFG-7

Overview

The DMT10H009LFG-7 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an RDS(ON) of 8.5mΩ at VGS=10V and 12.5mΩ at VGS=4.5V, supporting continuous drain currents up to 50A at TC=+25°C. The device utilizes a PowerDI3333-8 package with a thermal resistance (RθJC) of 3.8°C/W. Electrical characteristics include a gate threshold voltage of 1.1V to 2.5V, total gate charge of 41nC, and a maximum operating junction temperature of +150°C.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area compared to SO-8 packages.
100% unclamped inductive switching (UIS) testing in production ensures more reliable and robust end applications.

Applications

Synchronous Rectifier
Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The -7 suffix indicates a 2,000-unit tape and reel configuration, whereas other suffixes may denote different quantities or handling methods. Confirm compliance requirements such as RoHS and halogen-free status directly from the manufacturer's datasheet before procurement.

Selection Notes

Select this component when designing circuits requiring low conduction losses and compact footprints. The PowerDI3333-8 package provides significant board space savings compared to traditional SO-8 packages. Ensure the application operates within the specified thermal limits, considering the 3.8°C/W junction-to-case thermal resistance for effective heat dissipation strategies.

Part Context

This part belongs to the DMT10H series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for high-density power management solutions. The series emphasizes minimizing on-state resistance without compromising switching speed, making it suitable for modern electronic designs prioritizing efficiency and spatial constraints.

Replacement Considerations

Consult official Diodes Incorporated substitution guides for verified alternatives. Cross-referencing parameters such as RDS(ON), package dimensions, and thermal characteristics is essential to ensure functional compatibility in existing designs.