DMT10H009LSS-13

$1.37

Description：MOSFET N-CH 100V 13A/48A 8SO T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:98ddd0ed44e1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 13A/48A 8SO T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2309 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT10H009LSS-13

Overview

The DMT10H009LSS-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a low on-state resistance (RDS(ON)) of 9mΩ at VGS=10V with ID=10A, or 13.8mΩ at VGS=4.5V with ID=6A. The device supports a continuous drain current of 13A at TA=+25°C and 48A at TC=+25°C. It operates within a junction temperature range of -55°C to +150°C and utilizes an SO-8 surface-mount package.

Feature Summary

Designed for high conversion efficiency and minimized on-state losses through low RDS(ON).
Optimized for fast switching speed and low input capacitance in high-frequency applications.
Manufactured with totally lead-free, fully RoHS compliant materials that are halogen and antimony free.

Applications

High frequency switching circuits
Synchronous rectification systems
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm compliance requirements such as RoHS 3 and REACH status against current regulatory standards. Ensure the SO-8 package dimensions align with the target PCB footprint layout before finalizing procurement orders.

Selection Notes

Select this component when a 100V rating is required alongside low conduction losses. Evaluate thermal management needs based on the specified thermal resistance values for both ambient and case mounting conditions. Consider the gate threshold voltage characteristics to ensure compatibility with the intended logic-level drive signals.

Part Context

This part belongs to the DMT10H009LSS series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered to balance low static resistance with dynamic switching performance. The product is housed in a standard SO-8 plastic case suitable for automated surface-mount assembly processes.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume functional equivalence with other generic 100V MOSFETs without verifying pinout, thermal limits, and electrical parameters.