DMT10H010LK3-13

$0.69

Description：MOSFET N-CH 100V 68.8A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:936d0c638bd4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 68.8A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：68.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：8.8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：53.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2592 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMT10H010LK3-13

Overview

The DMT10H010LK3-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an RDS(ON) of 8.8mΩ at VGS=10V and 68.8A continuous drain current. The device utilizes a TO252 (DPAK) case with a maximum junction temperature of +150°C.

Feature Summary

100% unclamped inductive switching capability for robust end applications
Low on-resistance to minimize power losses
Low gate charge to minimize switching losses

Applications

Power management functions
DC-DC converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS 3 compliance standards and is free from halogen and antimony compounds as defined by the manufacturer's green product specifications.

Selection Notes

Select this component for high-efficiency power management designs requiring low conduction and switching losses. Ensure the application operates within the specified thermal limits and voltage ratings. Verify compatibility with standard TO252 footprint layouts and consider the transient thermal resistance characteristics for pulsed load conditions.

Part Context

This part belongs to the DMT10H series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are designed for general-purpose switching applications where low on-resistance and fast switching speeds are critical for maintaining system efficiency and performance under varying load conditions.

Replacement Considerations

Consult official datasheets for cross-reference data. Potential substitutes may include other 100V N-channel MOSFETs in TO252 packages with comparable RDS(ON) and ID ratings, provided pinouts and thermal characteristics align with the original design requirements.