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Product Detailed Parameters
- Description：MOSFET N-CH 100V 9.4A PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：9.4A (Ta), 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.5mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：71 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3000 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta), 139W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMT10H010LPS-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an 8.3mΩ maximum on-resistance at VGS=10V and supports up to 98A continuous drain current at TC=25°C. The device utilizes a PowerDI5060-8 surface-mount package with a profile under 1.1mm. Key electrical parameters include a gate threshold voltage of 1.4V typical, total gate charge of 58.4nC, and a junction-to-case thermal resistance of 0.9°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Thermally efficient PowerDI5060-8 package design for cooler running applications
- Low RDS(ON) characteristics to minimize on-state power losses
- Optimized switching performance with low input capacitance
- Lead-free finish compliant with RoHS standards
Applications
- Motor controls
- DC-DC converters
- Notebook battery power management
- Load switch circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per carrier. Confirm that the required package variant matches the standard PowerDI5060-8 or the SWP (Type UX) option available in the datasheet. Ensure procurement channels provide official documentation to validate component authenticity and manufacturing site compliance.
Selection Notes
Select this component when high conversion efficiency and fast switching speeds are required within a thin form factor. The device is suitable for applications demanding superior thermal dissipation through the exposed drain pad. Consider the 100V breakdown voltage and low gate threshold voltage for compatibility with standard logic-level drive signals in power management systems.
Part Context
This part belongs to the DMT10H010 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the PowerDI5060-8 package family but differs in voltage ratings and on-resistance specifications compared to other members like the DMT3006LPS-13 or DMTH8008LPS-13. The series emphasizes minimizing on-state losses while maintaining robust switching performance.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with Q-suffixes qualified to AEC-Q100/101/104/200 standards. Verify pinout compatibility and thermal resistance values when substituting with similar MOSFETs from other manufacturers.
